Technologies

GaN

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GaN (Gallium Nitride) is the promising compound semiconductor material for the next generation power device technology with its high electron mobility character. VIS' 8" GaN technology is developed on the proprietary engineering substrates with better lattice matching and high reliability robustness.

The device's outstanding figure of merit (FOM) surpasses silicon-based transistor under high switching frequency that makes the GaN becomes the optimum solutions for high power efficiency products in high performance computing and electrical vehicle applications.

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